Next Generation Low-power Device Research; - Multi-valued Logic Devices (NDR/NDT-based MVL Devices/Circuits Integration) - Neuromorphic Devices (Synaptic/Neuronal Devices and 3D Integration) - Novel Devices for Process-In-Memory
2D Materials-based Research; - 2D Semiconductor Fabrication Technologies (Doping, Contact, and etc.) - 2D Semiconductor Applications (Photodetectors and Transistors)
Journal Articles
(2024)
High energy density in artificial heterostructures through relaxation time modulation.
SCIENCE.
384,
(2024)
Layer-by-layer thinning of two-dimensional materials.
CHEMICAL SOCIETY REVIEWS.
(2024)
Oxide and 2D TMD semiconductors for 3D DRAM cell transistors.
NANOSCALE HORIZONS.
(2024)
Junctionless Negative-Differential-Resistance Device Using 2D Van-Der-Waals Layered Materials for Ternary Parallel Computing.
ADVANCED MATERIALS.
2310015
(2024)
Intrinsically stretchable sensory-neuromorphic system for sign language translation.
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE.
29,
101142
(2023)
Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array.
NATURE COMMUNICATIONS.
14,
(2023)
Broadband Van-der-Waals Photodetector Driven by Ferroelectric Polarization.
SMALL.
(2023)
Tactile Neuromorphic System: Convergence of Triboelectric Polymer Sensor and Ferroelectric Polymer Synapse.
ACS NANO.
17,
17
(2022)
Non-epitaxial single-crystal 2D material growth by geometrical confinement.
NATURE.
(2022)
A biomimetic ocular prosthesis system: emulating autonomic pupil and corneal reflections.
NATURE COMMUNICATIONS.
13,
1
(2022)
Ferro-floating memory: Dual-mode ferroelectric floatingmemory and its application to in-memory computing.
INFOMAT.
(2022)
Looking Beyond 0 and 1: Principles and Technology of Multi-Valued Logic Devices.
ADVANCED MATERIALS.
(2022)
A Van Der Waals Reconfigurable Multi-Valued Logic Device
and Circuit Based on Tunable Negative-Differential-Resistance
Phenomenon.
ADVANCED MATERIALS.
2202799
(2022)
Mixed-Dimensional Formamidinium Bismuth Iodides Featuring In-Situ Formed Type-I Band Structure for Convolution Neural Networks.
ADVANCED SCIENCE.
9,
14
(2022)
Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications.
ACS NANO.
16,
4
(2022)
Electrolyte‐Gated Vertical Synapse Array based on Van Der Waals Heterostructure for Parallel Computing.
ADVANCED SCIENCE.
(2021)
Photoelectroactive artificial synapse and its application to biosignal pattern recognition.
NPJ 2D MATERIALS AND APPLICATIONS.
5,
1
(2021)
High-specific-power flexible transition metal dichalcogenide solar cells.
NATURE COMMUNICATIONS.
12,
1
Patent/Intellectual Property
NEGATIVE DIFFERENTIAL RESISTANCE
DEVICE.
US 2022/0093803A1.
20230606.
UNITED STATES
TANDEM SOLAR CELLS HAVING A TOP OR BOTTOM METAL CHALCOGENIDE CELL.
US 2021/0359150A1 .
20230221.
UNITED STATES
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF.
US20210005710A1.
20221101.
UNITED STATES
NEGATIVE DIFFERENTIAL RESISTANCE Publication Classification
ELEMENT HAVING 3 - DIMENSION VERTICAL STRUCTURE.
US20200357988A1.
20220906.
UNITED STATES
다중 영미분 전달전도 특성을 갖는 반도체 소자 및 그 제조 방법.
10-2021-0005577.
20220706.
KOREA, REPUBLIC OF
MULTI - NEGATIVE DIFFERENTIAL TRANSCONDUCTANCE DEVICE AND METHOD OF PRODUCING THE SAME.
US20210111283A1.
20220510.
UNITED STATES
인공 시냅스 소자 및 이의 제조방법 (Artificial synaptic device and method for manufacturing the same).
10-2020-0119915.
20210907.
KOREA, REPUBLIC OF
반데르발스 힘을 이용한 박막 필름 전사 방법 (TRANSFER METHOD OF THIN FILMS USING VAN DER WAALS FORCE).
10-2018-0121014.
20210512.
KOREA, REPUBLIC OF
부성미분저항 소자 제조방법.
10-2019-0113760.
20210325.
KOREA, REPUBLIC OF
다중 부성미분 전달전도 특성 소자 및 그 제조방법.
10-2019-0127835.
20210225.
KOREA, REPUBLIC OF
반도체 소자 및 그 제조방법.
10-2019-0078909.
20210219.
KOREA, REPUBLIC OF
시냅스 소자 및 이의 제조 방법.
10-2019-0055291.
20210128.
KOREA, REPUBLIC OF
Semiconductor device with negative differential transconductance and method of manufacturing the same.
US20180358446A1.
20201117.
UNITED STATES
크로스바 메모리 구조를 이용한 뉴로모픽 소자.
10-2018-0104819.
20201012.
KOREA, REPUBLIC OF
3차원 수직 구조를 갖는 부성미분저항 소자.
10-2019-0054471.
20200825.
KOREA, REPUBLIC OF
부성 미분 전달컨덕턴스 특성을 갖는 반도체 소자 및 그 제조 방법.
10-2018-0148295.
20200625.
KOREA, REPUBLIC OF
자발 분극 동작 원리를 이용한 뉴런 소자.
10-2019-0049383.
20200624.
KOREA, REPUBLIC OF
2Ｔ1Ｃ 구조를 갖는 멀티 레벨 ＣＭＯＳ 랜덤 액세스 메모리 및 그 제조방법.
10-2018-0068304.
20200512.
KOREA, REPUBLIC OF
핀 구조를 갖는 반도체 소자 및 이의 제조 방법.
10-2018-0169742.
20200424.
KOREA, REPUBLIC OF
반도체소자 및 그 제조 방법.
10-2018-0039526.
20200413.
KOREA, REPUBLIC OF
Conference Paper
(2023)
BP-assisted formatin of vdW contact with MoS2.
AEFM 2023.
KOREA, REPUBLIC OF
(2023)
WSe2 FET with electron-beam-induced W-shaped I-V characteristic and its application to ternary NAND gate.
7th IEEE Electron Devices Technology and Manufacturing Conference.
KOREA, REPUBLIC OF
(2020)
MoSe2/ReS2 Vertical Heterostructures for High-efficiency Photovoltaics.
한국진공학회- 하계정기학술대회.
KOREA, REPUBLIC OF
(2020)
N-type Doping Technique using PPh3 based on TMDs.
한국진공학회- 하계정기학술대회.
KOREA, REPUBLIC OF
(2020)
Controllable photoacid diffusion using external electric field.
한국진공학회- 하계정기학술대회.
KOREA, REPUBLIC OF
(2020)
Artificial VdW Synapse based on WS2 for Brain-inspired Computing.
Nano Korea 2020.
KOREA, REPUBLIC OF
(2020)
High photovoltaic effect in vertical multilayer ReS2/MoSe2 heterostructures.
Nano Korea 2020.
KOREA, REPUBLIC OF
(2020)
Light-Induced Negative Differential Transconductance based on Partial Gate Technology.
Nano Korea 2020.
KOREA, REPUBLIC OF
(2019)
High-performance tunsten diselenide (WSe2)-based photodetector enhanced by HCl treatment.
The 11th International Conference on Advanced Materials and Devices.
KOREA, REPUBLIC OF
(2019)
Oxygen Plasma-based P-type Doping on Hafnium Disulfide.
The 11th International Conference on Advanced Materials and Devices.
KOREA, REPUBLIC OF
(2019)
Artificial Synapse based on 2D Van der Waals Heterostructure.
The 11th International Conference on Advanced Materials and Devices.
KOREA, REPUBLIC OF
(2019)
2D Material based Lateral Synaptic Device using Ion Gel Gating.
제57회 한국진공학회 하계.
KOREA, REPUBLIC OF
(2019)
Artificial Optic-Neural Synapse for Colored and Color-Mixed Pattern Recongnition.
제26회 한국반도체학술대회.
KOREA, REPUBLIC OF
(2019)
Artificial Synaptic Device based on Ferroelectric Polymer Capacitor.
제26회 한국반도체학술대회.
KOREA, REPUBLIC OF
(2018)
Micro-scale control of transition metal dichalcogenides (TMDs)-based transistor with plasma process.
제55회 한국진공학회 하계정기학술대회.
KOREA, REPUBLIC OF
(2018)
Negative differential resistance oscillator using vdW materail-based Esaki diode.
제55회 한국진공학회 하계정기학술대회.
KOREA, REPUBLIC OF
(2018)
Photovoltaic effect based on multilayer ReS2.
제55회 한국진공학회 하계정기학술대회.
KOREA, REPUBLIC OF
(2018)
Artificial Optic-Neural Synaptic Device for Colored-Pattern Recognition.
Nanotech 2018.
UNITED STATES
(2018)
Multi-Current-Peak Negative Differential Resistance Device using Two-Dimensional Materials.
NANOTECH 2018.
UNITED STATES
(2018)
High Performance Solid Polymer Electrolyte Atomic Switching Device using PVP/PMF.
Materials Research Society Meeting.
UNITED STATES
